The STGW19NC60HD devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Features:-
• Low on-voltage drop (VCE(sat))
• Very soft ultrafast recovery anti-parallel diode
Applications:-
• High frequency motor drives
• SMPS and PFC in both hard switch and resonant topologies
Specification:-
| Symbol | Parameter | Min | Type | Max | Units |
| V(BR)CES | Collector-emitter breakdown voltage (VGE= 0) | 600 | V | ||
| VCE(sat) | Collector-emitter saturation voltage VGE= 15 V, IC= 12 A | 1.8 | 2.5 | V | |
| VGE(th) | Gate threshold voltage | 5.75 | V | ||
| ICES | Collector cut-off current (VGE = 0) VCE= 600 V | 3.75 | 150 | µA | |
| IGES | Gate-emitter leakage current (VCE = 0) | ±100 | nA | ||
| gfs | Forward transconductance | 5 | S |
Related Document:-
* Product Images are shown for illustrative purposes only and may differ from actual product.
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