STGF19NC60KD IGBT – 600V 20A Short-Circuit Rugged IGBT

165.00

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Description

The STGF19NC60KD IGBT devices are very fast IGBTs developed using advanced PowerMESHâ„¢ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.

Features:-

• Low on voltage drop (VCE(sat))

• Low CRES / CIES ratio (no cross-conduction susceptibility)

• Short-circuit withstand time 10 μs

• IGBT co-packaged with ultra fast freewheeling diode

Applications:- 

• High frequency inverters

• Motor drives

Specification:-

Symbol Parameter Values Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C  Continuous Collector Current TC = 25 °C 16 A
IC @ TC = 100°C  Continuous Collector Current TC = 100 °C 10
ICP Pulsed Collector Current 75
VGE Gate-to-Emitter Voltage ± 20 V
PTOT Total dissipation at TC = 25 °C 32 W
TJ Operating Junction -55 to +150 °C
Tstg Storage Temperature Range


Related Document:-

 STGF19NC60KD IGBT Data Sheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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