RFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220 Package

IRFB4110 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• High efficiency synchronous rectification in SMPS

• Uninterruptible power supply

• High speed power switching

• Hard switched and high frequency circuits

Detailed Specifications

 

Number of Channels1 Channel Transistor PolarityN-Channel Drain-Source Breakdown Voltage (Vds)100V Continuous Drain Current (Id)180A Drain-Source Resistance (Rds On)4.5Ohms Gate-Source Voltage (Vgs)20V Gate Charge (Qg)210 nC Operating Temperature Range-55 – 175°C Power Dissipation (Pd)370W

Related Documents

 IRFB4110 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.