MOSFET – 100V 35A N-Channel Power MOSFET TO-220 Package

39.00

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Description

P30NF10 is apower MOSFET is the latest development of STMicroelectronis unique “Single Feature Sizeâ„¢” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:-

• Exceptional dv/dt capability

• 100% avalanche tested

• Application oriented characterization

• Switching application

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 35A
Drain-Source Resistance (Rds On) 0.045Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 55 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 115W

Related Documents:-

 P30NF10 MOSFET Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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