IRF9610 MOSFET – 200V 1.8A P-Channel Hexfet Power MOSFET TO-220 Package

IRF9610 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-• Dynamic dV/dt rating

• 100% avalanche rated

• Fast switching

• Ease of paralleling

• Simple Drive Requirements

• P-Channel

• Advanced process technology

Detailed Specifications:- Number of Channels1 Channel Transistor PolarityP-Channel Drain-Source Breakdown Voltage (Vds)-200V Continuous Drain Current (Id)-1.8A Drain-Source Resistance (Rds On)3Ohms Gate-Source Voltage (Vgs)20V Gate Charge (Qg)11 nC Operating Temperature Range-55 – 150°C Power Dissipation (Pd)20W 

Related Documents:- 

 IRF9610 MOSFET Datasheet 
* Product Images are shown for illustrative purposes only and may differ from actual product.