IRF510 MOSFET - 100V 5.6A N-Channel Power MOSFET TO-220 Package - Image 1
IRF510 MOSFET - 100V 5.6A N-Channel Power MOSFET TO-220 Package - Image 2
IRF510 MOSFET - 100V 5.6A N-Channel Power MOSFET TO-220 Package
IRF510 MOSFET - 100V 5.6A N-Channel Power MOSFET TO-220 Package - Image 2
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IRF510 MOSFET – 100V 5.6A N-Channel Power MOSFET TO-220 Package

₹48.00

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Description

IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 5.6A
Drain-Source Resistance (Rds On) 540mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 8.3 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 43W

Related Documents:-

 IRF510 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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