FDA50N50 MOSFET – 500V 48A N-Channel Power MOSFET TO-3PN Package

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Description

FDA50N50 MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features:-

• Low offset voltage

• Full-voltage operation

• Easily driven without buffer

• Low error voltage

• No high-temperature run-away

• Excellent thermal stability

Detailed Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 500V
Continuous Drain Current (Id) 48A
Drain-Source Resistance (Rds On) 105mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 137 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 625W

Related Documents

 FDA50N50 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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