2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package

355.00

Description

2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications

Features:-

• High breakdown voltage VDSS = 1500 V

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator, DC-DC converter and motor driver

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 1500V
Continuous Drain Current (Id) 2.5A
Drain-Source Resistance (Rds On) 12Ohms
Gate-Source Voltage (Vgs) 20V
Configuration Single
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 100W

Related Documents:-

 2SK1317 MOSFET Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.