2SK1120 MOSFET – 1000V 8A N-Channel Power MOSFET TO-3PN Package

2SK1120  utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications

Features:-

• Low drain−source ON resistance

• High forward transfer admittance

• Low leakage current

• Enhancement mode

• RDS (ON) = 1.5 Ω (typ.)

• |Yfs| = 4.0 S (typ.)

•  IDSS = 300 μA (max) (VDS = 800 V)

•  1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Detailed Specifications:-

Related Documents:-

 2SK1120 MOSFET Datasheet