1N5822 Schottky Barrier Diode

The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

Features:-

• Extremely Low VF

• Low Power Loss/High Efficiency

• Low Stored Charge, Majority Carrier Conduction

• Shipped in plastic bags, 500 per bag

• Available in Tape and Reel, 1500 per reel, by adding a “RL” suffix to the part number

• Pb-Free Packages are Available

Mechanical Characteristics:-

• Case: Epoxy, Molded

• Weight: 1.1 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Polarity: Cathode indicated by Polarity Band

Specification:-

Related Document:-

 IN5822 Diode Data Sheet