SI2302 MOSFET – (SMD SOT-23 Package) – N-Channel Logic Level MOSFET

19.50

Description

The SI2303 SMD N-Channel enhancement mode field-effect transistor is a plastic package using TrenchMOSâ„¢1 technology.

The product availability: SI2302DS in SOT23.

Features:-

• TrenchMOS™ technology

• Very fast switching

• Logic level compatible

• Subminiature surface mount package.

Application:-

• Battery management

• High speed switch

• Low power DC to DC converter

Specification:-

Symbol Parameter Value Unit
VDSS Drain-Source Voltage 20 V
ID Drain Current Continuous 2.5 A
Ptot Total Power Dissipation 0.83 W
RDSon Drain-source on-state Resistance 85 mΩ
TJ Storage Temperature Range 150 ° C

Related Document:-

S12302 SMD Data Sheet

* Product Images are shown for illustrative purposes only and may differ from actual product.