RFZ48N MOSFET – 55V 64A N-Channel Power MOSFET TO-220 Package

35.00

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Description

IRFZ48N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

• Advanced process technology

• Ultra Low On-Resistance

• Fully Avalanche Rated

• 175 °C operating temperature

• Fast switching

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 64A
Drain-Source Resistance (Rds On) 0.014Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 81 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 130W

Related Documents

 IRFZ48N MOSFET Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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