RFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220 Package

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Description

IRFB4110 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• High efficiency synchronous rectification in SMPS

• Uninterruptible power supply

• High speed power switching

• Hard switched and high frequency circuits

Detailed Specifications

 

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 180A
Drain-Source Resistance (Rds On) 4.5Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 210 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 370W

Related Documents

 IRFB4110 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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