MJE340 NPN Bipolar Power Transistor 300V 500mA TO-126 Package

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    Description

    MJE340 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

    Features:-

    • High DC current gain

    • Low collector−emitter saturation voltage

    • High current−gain − bandwidth product

    • Annular construction for low leakage

    • Complementary NPN – PNP devices

    Detailed Specifications:-

    Transistor Polarity NPN
    Collector−Emitter Voltage (VCEO) 300V
    Collector−Base Voltage (VCBO) 300V
    Emitter−Base Voltage (VEBO) 3V
    Continuous Collector Current (Ic) 0.5A
    Power Dissipation (Pd) 20.8W
    Operating Temperature Range -65 – 150°C
    DC Current Gain (hFE) 30-240

    Related Documents:-

     MJE340 Transistor Datasheet

    * Product Images are shown for illustrative purposes only and may differ from actual product.