IRFP350 MOSFET – 400V 16A N-Channel Power MOSFET TO-247 Package

157.00

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Description

IRFP350 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Avalanche Rugged Technology

• Lower Input Capacitance

• Extended Safe Operating Area

• Lower Leakage Current: 10µA (Max.) @  VDS = 400V

• Improved Gate Charge

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 400V
Continuous Drain Current (Id) 16A
Drain-Source Resistance (Rds On) 300mOhms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 150 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 190W

Related Documents

 IRFP350 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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