IRFP044N MOSFET – 55V 53A N-Channel HEXFET Power MOSFET TO-247 Package

IRFP044N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Advanced process technology

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Detailed Specifications:- Number of Channels1 Channel Transistor PolarityN-Channel Drain-Source Breakdown Voltage (Vds)55V Continuous Drain Current (Id)53A Drain-Source Resistance (Rds On)0.020Ohms Gate-Source Voltage (Vgs)20V Gate Charge (Qg)61 nC Operating Temperature Range-55 – 175°C Power Dissipation (Pd)120W

Related Documents:-

 IRFP044N MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.