IRFI644 MOSFET – 250V 7.9A N-Channel Power MOSFET TO-220 Fullpak package

85.00

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Description

IRFI644 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Isolated package

• High voltage isolation

• Sink to lead creepage distance = 4.8 mm

• Dynamic dV/dt rating

• Low thermal resistance

• Lead (Pb)-free available

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 250V
Continuous Drain Current (Id) 7.9A
Drain-Source Resistance (Rds On) 0.28Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 68 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 40W

Related Documents

 IRFI644 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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