IRFBC30 MOSFET – 600V 3.6A N-Channel Power MOSFET TO-220 Package

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Description

IRFBC30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 600V
Continuous Drain Current (Id) 3.6A
Drain-Source Resistance (Rds On) 2.2Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 31 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 74W

Related Documents

 IRFBC30 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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