IRF1405 MOSFET – 55V 169A N-Channel HEXFET Power MOSFET TO-220 Package

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Description

IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Repetitive avalanche allowed up to Tjmax

• Lead-free

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 169A
Drain-Source Resistance (Rds On) 5.3mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 260 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 330W

Related Documents

 IRF1405 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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