The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Features:-
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Specification:-
| Symbol | Parameter | Ratings | Units |
| BVCES | Collector to Emitter Voltage | 1200 | V |
| IC25 | Collector Current Continuous | A | |
| At TC = 25°C | 43 | ||
| IC110 | At TC = 100°C | 22 | |
| ICM | Collector Current Pulsed | 80 | A |
| VGES | Gate to Emitter Voltage Continuous | ±20 | V |
| VGEM | Gate to Emitter Voltage Pulsed | ±30 | V |
| SSOA | Switching Safe Operating Area at TJ = 150°C | 55A at 1200V | |
| PD | Power Dissipation Total at TC = 25°C | 298 | W |
| Power Dissipation  TC > 25°C | 2.38 | W/°C | |
| TJ,Tstg | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Maximum Lead Temperature for Soldering | 260 | °C |
| tsc | Short Circuit Withstand Time at VGE = 15V | 8 | µs |
| tsc | Short Circuit Withstand Time at VGE = 12V | 15 | µs |
 * Product Images are shown for illustrative purposes only and may differ from actual product.
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