G60N100BNTD IGBT – 1000V 60A N-Channel IGBT
₹325.00
Description
The G60N100B2TD is a  1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
Applications:-
• UPS, Welder
Features:-
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Specification:-
| Symbol | Parameter | Ratings | Units |
| VCES | Collector-emitter voltage | 1000 | V |
| VGES | DC collector curren | ±25 | V |
| IC | Collector Current @ TC = 25°C | 60 | A |
| Collector Current @ TC = 100°C | 42 | ||
| ICM | Pulsed Collector Current | 200 | A |
| IF | Diode Continuous Forward Current @ TC =100°C | 15 | A |
| PD | Maximum Power Dissipation @ TC = 25°C | 180 | W |
| Maximum Power Dissipation @ TC = 100°C | 72 | ||
| TJ | Operating Junction Temperature | -55 to +150 | °C |
| Tstg | Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes | 300 | °C |
 * Product Images are shown for illustrative purposes only and may differ from actual product.
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