FDP090N10 MOSFET – 100V 75A N-Channel Power Trench MOSFET TO-220 Package

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Description

FDP090N10 N-Channel MOSFET is produced using  advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Low offset voltage

• Full-voltage operation

• Fast switching speed

• Low error voltage

• Low gate charge

• High power and current handling capability

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 75A
Drain-Source Resistance (Rds On) 9mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 116 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 208W

Related Documents:-

 FDP090N10 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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