FDN360P MOSFET – (SMD SOT-23 Package) – 30V 2A P-Channel Logic Level MOSFET

14.00

Description

This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features:-

 

  • -2 A, -30 V
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    RDS(ON) = 0.080Ω @ VGS = -10V

    RDS(ON) = 0.125Ω @ VGS = -4.5V

  • Low gate charge (5nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability
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    Specifications:-

     

  • Drain-Source Voltage:  -30V
  • Gate-Source Voltage: ±20V
  • Drain Current – Continuous: -2A
  • Drain Current – Pulsed: -20A
  • Maximum Power Dissipation: 0.5-0.46W
  • Operating and Storage Junction Temperature Range: -55 to +150°C
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    Package Includes:-

    1 x FDN360P MOSFET – (SMD SOT-23 Package) – 30V 2A P-Channel Logic Level MOSFET

    * Product Images are shown for illustrative purposes only and may differ from actual product.