FDN337N MOSFET – (SMD SOT-23 Package) – 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET

    ₹14.00

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    Description

    Super SOT-23 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

    Features:-

     

  • 2.2 A, 30 V

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    RDS(ON) = 0.065Ω @ VGS = 4.5V

    RDS(ON) = 0.082Ω @ VGS = 2.5V

  • Industry standard outline SOT-23 surface mount package using proprietary Super SOT-23 design for superior thermal and electrical capabilities.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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    Specifications:-

     

  • Drain-Source Voltage:  30V
  • Gate-Source Voltage: ±20V
  • Drain Current – Continuous: 2.2A
  • Drain Current – Pulsed: 10A
  • Maximum Power Dissipation: 0.5-0.46W
  • Operating and Storage Junction Temperature Range: -55 to +150°C

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    Package Includes:-

    1 x FDN337N MOSFET – (SMD SOT-23 Package) – 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET

    * Product Images are shown for illustrative purposes only and may differ from actual product.