CL100 NPN Medium Power Transistor 50V 1A TO-39 Metal Package

19.00

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Description

CL100 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• High Ruggedness

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Detailed Specifications:-

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 50V
Continuous Collector Current (Ic) 1A
Emitter Base Voltage (VEBO) 5V
Power Dissipation (Pd) 3W
Operating Temperature Range -55 – 175°C
DC Current Gain (hFE) 20

Related Documents:-

 CL100 Transistor Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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