BD682 PNP Power Darlington Transistor 100V 4A TO-126 Package - Image 1
BD682 PNP Power Darlington Transistor 100V 4A TO-126 Package - Image 2
BD682 PNP Power Darlington Transistor 100V 4A TO-126 Package
BD682 PNP Power Darlington Transistor 100V 4A TO-126 Package - Image 2
BD681 NPN Power Darlington Transistor 100V 4A TO-126 Package
BD681 NPN Power Darlington Transistor 100V 4A TO-126 Package ₹15.00
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BD911 NPN Power Transistor 100V 15A TO-220 Package
BD911 NPN Power Transistor 100V 15A TO-220 Package ₹28.00

BD682 PNP Power Darlington Transistor 100V 4A TO-126 Package

₹15.00

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Description

BD682 is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• Low saturation voltage

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Detailed Specifications:-

Transistor Polarity PNP
Collector−Emitter Voltage (VCEO) 100V
Collector−Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current (Ic) 4A
Continuous Base Current (Ib) 0.1A
Operating Temperature Range -65 – 150°C
Power Dissipation (Pd) 40W
DC Current Gain (hFE) 750

Related Documents:-

 BD682 Transistor Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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