4N36 optocoupler consists of gallium arsenide infrared LED and a silicon NPN photo transistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Features:-
- Isolation test voltage 5000 VRMS
- Interfaces with common logic families
- Input-output coupling capacitance < 0.5 pF
- Industry standard dual-in-line 6 pin package
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
APPLICATIONS:-
- AC mains detection
- Reed relay driving
- Switch mode power supply feedback
- Telephone ring detection
- Logic ground isolation
- Logic coupling with high frequency noise rejection
AGENCY APPROVALS:-
- UL file no. E52744 (pending)
- cUL tested to CSA 22.2 bulletin 5A
- DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
- (pending), available with option 1
- BSI: EN 60065, EN 60950-1
- FIMKO
- CQC
Specification:-
| Symbol | Parameter | Value | Unit |
| VR | Reverse voltage | 6 | V |
| IF | Forward current | 60 | mA |
| IFSM | Surge current | 2.5 | A |
| Pdiss | Power dissipation | 70 | mW |
| VCEO | Collector-emitter breakdown voltage | 70 | V |
| VEBO | Emitter-base breakdown voltage | 7 | V |
| IC | Collector current | 50 | mA |
Package Includes:-
1 x 4N36 Optocoupler Phototransistor IC DIP-8 Package
* Product Images are shown for illustrative purposes only and may differ from actual product.