2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package

K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features:-

• 9A,900V, RDS(on)(Max1.1Ω)@VGS=10V

• Ultra-low Gate charge(Typical 58nC)

• Fast Switching Capability

• 100%Avalanche Tested

• Maximum Junction Temperature Range(150℃)

Detailed Specifications:-

Related Documents:-

 2SK2611 MOSFET Datasheet