BU505 - NPN High Voltage Multiepitaxial Fast Switching Transisto - Image 1
BU505 - NPN High Voltage Multiepitaxial Fast Switching Transisto - Image 2
BU505 - NPN High Voltage Multiepitaxial Fast Switching Transisto
BU505 - NPN High Voltage Multiepitaxial Fast Switching Transisto - Image 2
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BU508A NPN High Voltage Fast switching Power Transistor 700V 5A TO-3PN Package
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BU505 – NPN High Voltage Multiepitaxial Fast Switching Transisto

₹24.00

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Description

BU505 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features

• High Ruggedness

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Detailed Specifications

 

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 1500V
Continuous Collector Current (Ic) 2.5A
Continuous Base Current (Ib) 1A
Operating Temperature Range -65 – 150°C
Power Dissipation (Pd) 75W
Collector Peak Current (ICM) 4A
Thermal Resistance Junction-Case 1.67°C/W
Fall Time (tF) 350 ns

Related Documents

BU505 Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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