BD239C NPN Power Transistor 100V 2A TO-220 Package

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Description

BD239C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• Low saturation voltage

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Detailed Specifications:-

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 100V
Collector−Base Voltage (VCBO) 115V
Continuous Collector Current (Ic) 2A
Continuous Base Current (Ib) 0.6A
DC Current Gain (hFE) 40
Operating Temperature Range -65 – 150°C
Power Dissipation (Pd) 30W
Junction Temperature  150°C

Related Documents

 BD239C Transistor Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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