IRFP250N MOSFET – 200V 30A N-Channel Power MOSFET TO-247 Package

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Description

IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Advanced process technology

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

• Ease of paralleling

• Simple drive requirements

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 30A
Drain-Source Resistance (Rds On) 0.075Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 123 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 214W

Related Documents:-

 IRFP250N MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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