IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package - Image 1
IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package - Image 2
IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package
IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package - Image 2
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IRF610 MOSFET - 200V 3.3A N-Channel Power MOSFET TO-220 Package
IRF610 MOSFET - 200V 3.3A N-Channel Power MOSFET TO-220 Package ₹31.00

IRF540 MOSFET – 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package

₹25.00

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Description

IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC

Detailed Specifications

 

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 33A
Drain-Source Resistance (Rds On) 44mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 71 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 130W

Related Documents

 IRF540 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

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