LF356 JFET Input Op-Amp IC DIP-8 Package

48.00

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Description

The LF356 device are the first monolithic JFET input operational amplifiers to incorporate well matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FETâ„¢ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Features:-

1. Advantages 

– Replace Expensive Hybrid and Module FET Op Amps

– Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices

– Excellent for Low Noise Applications Using Either High or Low Source Impedance

—Very Low 1/f Corner

– Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers

– New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems

– Internal Compensation and Large Differential Input Voltage Capability

2. Common Features 

– Low Input Bias Current: 30 pA

– Low Input Offset Current: 3 pA

– High Input Impedance: 1012 Ω

– Low Input Noise Current: 0.01 pA/√Hz

– High Common-Mode Rejection Ratio: 100 dB

– Large DC Voltage Gain: 106 dB

3. Uncommon Features 

– Extremely Fast Settling Time to 0.01%: 1.5 μs

– Fast Slew Rate: 12 V/µs

– Wide Gain Bandwidth: 5 MHz

– Low Input Noise Voltage: 12 nV/√Hz

Specification:-

Parameter Min Max Unit
 Supply Voltage ±18 V
Differential input voltage ±30 V
Output short-circuit (to ground) Continuous
Operating temperature -40 125 °C
Soldering information (lead temp.) 260 °C
Storage temperature -65 150 °C
Input voltage ±16 V

Related Document:-

 LF356 IC Datasheet

* Product Images are shown for illustrative purposes only and may differ from actual product.

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